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LRI512 数据表(PDF) 8 Page - STMicroelectronics

部件名 LRI512
功能描述  Memory TAG IC 512 bit High Endurance EEPROM 13.56MHz, ISO 15693 Standard Compliant with E.A.S.
PDF  54 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

LRI512 数据表(HTML) 8 Page - STMicroelectronics

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COMMUNICATIONS SIGNAL FROM LRI512 TO VCD
For some parameters several modes have been
defined in order to allow for use in different noise
environments and application requirements.
Load Modulation
The LRI512 is capable of communication to the
VCD via an inductive coupling area in which the
carrier is loaded to generate a subcarrier with fre-
quency fS. The subcarrier is generated by switch-
ing in a load in the LRI512.
Subcarrier
The LRI512 supports the one subcarrier and two
subcarriers response formats. These formats are
selected by the VCD using the first bit in the proto-
col header.
When one subcarrier is used, the frequency fS1 of
the subcarrier load modulation is 423.75kHz (fC/
32).
When two subcarriers are used, the frequency fS1
is 423.75 kHz (fC/32), and the frequency fS2 is
484.28 kHz (fC/28). When using the two subcarri-
ers mode, the LRI512 generates a continuous
phase relationship between fS1 and fS2.
Data Rates
The LRI512 can respond using the low or the high
data rate format. The selection of the data rate is
made by the VCD using the second bit in the pro-
tocol header.
Table 4 shows the different data rates the LRI512
can achieve using each combination.
Table 4. Response Data Rate
Data Rate
One Subcarrier
Two Subcarriers
Low
6.62 kbit/s
(fC/2048)
6.67 kbit/s
(fC/2032)
High
26.48 kbit/s
(fC/512)
26.69 kbit/s
(fC/508)



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