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LRI512 数据表(PDF) 44 Page - STMicroelectronics

部件名 LRI512
功能描述  Memory TAG IC 512 bit High Endurance EEPROM 13.56MHz, ISO 15693 Standard Compliant with E.A.S.
PDF  54 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

LRI512 数据表(HTML) 44 Page - STMicroelectronics

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LRI512
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MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings table may cause per-
manent damage to the device. These are stress
ratings only and operation of the device at these or
any other conditions above those indicated in the
Operating sections of this specification is not im-
plied. Exposure to Absolute Maximum Rating con-
ditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics
SURE Program and other relevant quality docu-
ments.
Table 56. Absolute Maximum Ratings
Note: 1. IPC/JEDEC J-STD-020A
2. ESD test: ISO10373-7 specification
Symbol
Parameter
Condition
Min.
Max.
Unit
TSTG
Storage Temperature
W4
ST antistatic bag,
max 23 months
15
25
°C
SB
Mounted wafer in a wafer-
sawing box (8"),
max 25 wafers
15
25
°C
A1T/ISOR
40-60% RH, max 2 Years
15
25
°C
A1S/ISOR
Reels in shrink film and
packed in hexagonal
cardboard box
15
25
°C
A2T/ISOK
40% RH, max 1 year
15
25
°C
C40
Reels in ST cardboard box
15
25
°C
VMAX
Maximum Input Voltage on AC0 / AC1
–7
7
V
VESD
Electrostatic Discharge
Voltage2
A1T/ISOR
ISO 10373-7
–7000
7000
V
A1S/ISOR
ISO 10373-7
–7000
7000
V
A2T/ISOK
ISO 10373-7
–7000
7000
V
C40
ISO 10373-7
–7000
7000
V



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