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LRI512 数据表(PDF) 47 Page - STMicroelectronics

部件名 LRI512
功能描述  Memory TAG IC 512 bit High Endurance EEPROM 13.56MHz, ISO 15693 Standard Compliant with E.A.S.
PDF  54 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

LRI512 数据表(HTML) 47 Page - STMicroelectronics

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LRI512
Table 59. AC Characteristics
Note: 1. PA Min is the minimum H-field required to communicate with the LRI512
PA Max is the maximum H-field that the device can support before clamping the incoming signal
Symbol
Parameter
Test Condition (in addition to
those in Table 57)
Min.
Typ.
Max.
Unit
fCC
External RF Signal Frequency
13.553
13.56
13.567
MHz
MICARRIER 10% Carrier Modulation Index
MI=(A-B)/(A+B)
10
30
%
tRFR, tRFF
10% Rise and Fall time
0
3.0
µs
tRFSBL
10% Minimum Pulse Width for
bit
7.1
9.44
µs
MICARRIER 100% Carrier Modulation Index
MI=(A-B)/(A+B)
95
100
%
tRFR, tRFF
100% Rise and Fall time
0
3.5
µs
tRFSBL
100% Minimum Pulse Width for
bit
7.1
9.44
µs
tJIT
Bit pulse Jitter
-2
+2
µs
tMAX
Maximum Carrier Rise Time
Zero to Maximum field strength
induced Voltage on Coil
3
V/µs
tMINCD
Minimum Time from Carrier
Generation to First Data
From H-field min
0.1
1
ms
fSH
Subcarrier Frequency High
FCC/32
423.75
kHz
fSL
Subcarrier Frequency Low
FCC/28
484.28
kHz
t1
Time for LRI512 Response
4224/FS
313
320.9
322
µs
t2
Time between Commands
4224/FS
309
311.5
314
µs
rL
Resistive Load (for Modulation)
500
1000
2000
Ω
PA
H-field Energy on LRI512
Antenna
A1T/ISOR
0.15
5
A/m
A1S/ISOR
0.15
5
A/m
A2T/ISOK
0.15
5
A/m
C40
1
5
A/m
tW
Programming Time
5ms



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