1/12

PRELIMINARY DATA

October 1999

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

M14256

M14128

Memory Card IC

256/128 Kbit Serial I²C Bus EEPROM

s

s

Supports 400 kHz Protocol

s

Single Supply Voltage (2.5 V to 5.5 V)

s

Hardware Write Control

s

BYTE and PAGE WRITE (up to 64 Bytes)

s

BYTE, RANDOM and SEQUENTIAL READ

Modes

s

Self-Timed Programming Cycle

s

Automatic Address Incrementing

s

Enhanced ESD/Latch-Up Behaviour

s

100,000 Erase/Write Cycles (minimum)

s

40 Year Data Retention (minimum)

s

5 ms Programming Time (typical)

DESCRIPTION

Each device is an electrically erasable program-

mable memory (EEPROM) fabricated with STMi-

croelectronics’s

High

Endurance,

Double

Polysilicon, CMOS technology. This guarantees

an endurance typically well above 100,000 Erase/

Write cycles, with a data retention of 40 years. The

memory operates with a power supply as low as

2.5 V.

The M14256 and M14128 are available in micro-

module form only. For availability of the M14256 or

Micromodule (D22)

Figure 1. Logic Diagram

AI02217

SDA

VCC

M14xxx

WC

SCL

GND

Table 1. Signal Names

SDA

Serial Data/Address Input/

Output

SCL

Serial Clock

WC

Write Control

Supply Voltage

GND

Ground