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March 1999

M14C16

M14C04

Memory Card IC

16/4 Kbit Serial I²C Bus EEPROM

s

Supports 400 kHz Protocol

s

Single Supply Voltage (2.5 V to 5.5 V)

s

Hardware Write Control

s

BYTE and PAGE WRITE (up to 16 Bytes)

s

BYTE, RANDOM and SEQUENTIAL READ

Modes

s

Self-Timed Programming Cycle

s

Automatic Address Incrementing

s

Enhanced ESD/Latch-Up Behaviour

s

1 Million Erase/Write Cycles (minimum)

s

40 Year Data Retention (minimum)

s

5 ms Programming Time (typical)

DESCRIPTION

Each device is an electrically erasable program-

mable memory (EEPROM) fabricated with STMi-

croelectronics’s

High

Endurance,

Single

Polysilicon, CMOS technology. This guarantees

an endurance typically well above one million

Erase/Write cycles, with a data retention of

40 years. The memory operates with a power sup-

ply as low as 2.5 V.

The M14C16 and M14C04 are each available in

wafer form (either sawn or unsawn) and in micro-

module form (on film).

standard. This is a two wire serial interface that

Figure 1. Logic Diagram

AI02217

SDA

VCC

M14xxx

WC

SCL

GND

Table 1. Signal Names

SDA

Serial Data/Address Input/

Output

SCL

Serial Clock

WC

Write Control

Supply Voltage

GND

Ground

Micromodule (D20)

Wafer