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BAS21 数据表(PDF) 4 Page - ON Semiconductor |
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BAS21 数据表(HTML) 4 Page - ON Semiconductor |
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4 / 7 page ![]() © 1999 Fairchild Semiconductor Corporation www.fairchildsemi.com BAS21 Rev. 1.3 3 Typical Performance Characteristics Figure 1. Reverse Voltage vs. Reverse Current BV - 1.0 to 100 A Figure 2. Reverse Current vs. Reverse Voltage IR - 55 to 205 V Figure 3. Reverse Current vs. Reverse Voltage IR - 180 to 255 V Figure 4. Forward Voltage vs. Forward Current VF - 1.0 to 100 A Figure 5. Forward Voltage vs. Forward Current VF - 0.1 to 10 mA Figure 6. Forward Voltage vs. Forward Current VF - 10 to 800 mA 3 5 10 20 30 50 100 275 300 325 I - REVERSE CURRENT (uA) R Ta= 25°C GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature 55 75 95 115 135 155 175 195 0 10 20 30 40 50 V - REVERSE VOLTAGE (V) R Ta= 25°C GENERAL RULE: The Reverse Current of a diode will approximately double for every ten Degree C increase in Temperature 180 200 220 240 20 30 40 50 60 70 80 90 100 V - REVERSE VOLTAGE (V) R Ta= 25°C 255 1 2 3 5 10 20 30 50 100 250 300 350 400 450 I - FORWARD CURRENT (uA) F Ta= 25°C 0.1 0.2 0.3 0.5 1 2 3 5 10 450 500 550 600 650 700 I - FORWARD CURRENT (mA) F 725 Ta= 25°C 10 20 30 50 100 200 300 500 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 I - FORWARD CURRENT (mA) F 800 Ta= 25°C |
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