© 1999 Fairchild Semiconductor Corporation

www.fairchildsemi.com

BAS21 Rev. 1.3

2

Thermal Characteristics

Values are at TA = 25°C unless otherwise noted.

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

Max.

Unit

PD

Total Device Dissipation

350

mW

Derate Above 25

C2.8

mW/

C

RJA

Thermal Resistance, Junction-to-Ambient

357

C/W

Symbol

Parameter

Conditions

Min.

Max.

Unit

BV

Breakdown Voltage

IR = 100 A250

V

IR

Reverse Voltage Leakage Current

VR = 200 V

100

nA

VR = 200 V, TA = 150°C

100

A

VF

Forward Voltage

IF = 100 mA

1.0

V

IF = 200 mA

1.25

V

CO

Diode Capacitance

VR = 0, f = 1.0 MHz

5.0

pF

TRR

Reverse Recovery Time

IF = IR = 30 mA, IRR = 3.0 mA,

RL = 100 

50

nS