© 1999 Fairchild Semiconductor Corporation

www.fairchildsemi.com

BAS21 Rev. 1.3

May 2016

BAS21

General-Purpose High Voltage Diode

Ordering Information

Absolute Maximum Ratings(1), (2)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Notes:

1. These ratings are based on a maximum junction temperature of 150

C.

2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or

low-duty-cycle operations.

Part Number

Top Mark

Package

Packing Method

BAS21

A82.

SOT-23 3L

Tape and Reel

Symbol

Parameter

Value

Unit

WIV

Working Inverse Voltage

250

V

IO

Average Rectified Current

200

mA

IF

DC Forward Current

600

mA

if

Recurrent Peak Forward Current

700

mA

if(surge)

Peak Forward Surge Current

Pulse Width = 1.0 second

1.0

A

Pulse Width = 1.0 microsecond

2.0

TSTG

Storage Temperature Range

-55 to +150

C

TJ

Operating Junction Temperature

150

C

SOT-23

3

1

2

A82.

3

12

2 NC

3

1

CONNECTION DIAGRAM