AP30P06NF datasheet(1/7 Pages) APME

部件名	AP30P06NF

功能描述	-60V P-Channel Enhancement Mode MOSFET

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制造商	APME [A POWER MICROELECTRONICS]

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AP30P06NF

-60V P-Channel Enhancement Mode MOSFET

AP30P06NF REV1.0

永源微電子科技有限公司

Description

The AP30P06NF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = -60V ID =-30A

RDS(ON) < 35mΩ @ VGS=-10V (Type：28mΩ)

Application

Lithium battery protection

Wireless impact

Mobile phone fast charging

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP30P06NF

PDFN5*6-8L

AP30P06NF XXX YYYY

5000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

-60

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25

℃

Continuous Drain Current, -VGS @ -10V1

-30

A

ID@TC=100

℃

Continuous Drain Current, -VGS @ -10V1

-27

A

IDM

Pulsed Drain Current2

-85

A

EAS

Single Pulse Avalanche Energy3

113

mJ

IAS

Avalanche Current

47.6

A

PD@TC=25

℃

Total Power Dissipation4

52.1

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

25

℃/W

RθJC

Thermal Resistance Junction-Case1

2.4

℃/W

类似零件编号 - AP30P06NF

制造商	部件名	数据表	功能描述
A POWER MICROELECTRONIC...	AP30P06BD	969Kb / 7P	-60V P-Channel Enhancement Mode MOSFET REV1.0
	AP30P06D	1Mb / 7P	-60V P-Channel Enhancement Mode MOSFET
	AP30P06Y	1Mb / 8P	-60V P-Channel Enhancement Mode MOSFET

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