| 数据搜索系统,热门电子元器件搜索 |
|
AP30P06NF 数据表(PDF) 3 Page - A POWER MICROELECTRONICS |
|
|
|||||||||||||||||||||||||||||
AP30P06NF 数据表(HTML) 3 Page - A POWER MICROELECTRONICS |
|
3 / 7 page ![]() AP30P06NF -60V P-Channel Enhancement Mode MOSFET AP30P06NF REV1.0 永源微電子科技有限公司 0.2 0.4 0.6 0.8 1 0 20 40 60 -VSD , Source-to-Drain Voltage (V) QG , Total Gate Charge (nC) 0 0.5 1 1.5 -50 0 50 100 150 TJ ,Junction Temperature ( ) 0.5 1.0 1.5 2.0 -50 0 50 100 150 TJ , Junction Temperature ( ) Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) v.s TJ Fig.6 Normalized RDSON v.s TJ |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |