AP30P06NF

-60V P-Channel Enhancement Mode MOSFET

AP30P06NF REV1.0

永源微電子科技有限公司

Electrical Characteristics (TC=25℃unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=-250uA

-60

-68

---

V

△

BVDSS/△TJ

BVDSS Temperature Coefficient

Reference to 25℃ , ID=-1mA

---

-0.035

---

V/℃

RDS(ON)

Static Drain-Source On-Resistance2

VGS=-10V , ID=-10A

---

28

35

mΩ

VGS=-4.5V , ID=-8A

---

35

42

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =-250uA

-1.0

-1.6

-2.5

V

△

VGS(th)

VGS(th) Temperature Coefficient

---

4.28

---

mV/℃

IDSS

Drain-Source Leakage Current

VDS=-48V , VGS=0V , TJ=25℃

---

---

1

uA

VDS=-48V , VGS=0V , TJ=55℃

---

---

5

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

gfs

Forward Transconductance

VDS=-10V , ID=-18A

---

23

---

S

Rg

Gate Resistance

VDS=0V , VGS=0V , f=1MHz

---

7

---

Ω

Qg

Total Gate Charge (-4.5V)

VDS=-20V , VGS=-4.5V , ID=-

12A

---

25

---

nC

Qgs

Gate-Source Charge

---

6.7

---

Qgd

Gate-Drain Charge

---

5.5

---

Td(on)

Turn-On Delay Time

VDD=-15V , VGS=-10V ,

RG=3.3Ω,

ID=-1A

---

38

---

ns

Tr

Rise Time

---

23.6

---

Td(off)

Turn-Off Delay Time

---

100

---

Tf

Fall Time

---

6.8

---

Ciss

Input Capacitance

VDS=-15V , VGS=0V , f=1MHz

---

3635

---

pF

Coss

Output Capacitance

---

224

---

Crss

Reverse Transfer Capacitance

---

141

---

IS

Continuous Source Current1,5

VG=VD=0V , Force Current

---

---

-35

A

ISM

Pulsed Source Current2,5

---

---

-70

A

VSD

Diode Forward Voltage2

VGS=0V , IS=-1A , TJ=25℃

---

---

-1

V

Note :

1

、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2

、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3

、The EAS data shows Max. rating . The test condition is VDD=-48V,VGS =-10V,L=0.1mH,IAS =-47.6A

4

、The power dissipation is limited by 150℃ junction temperature

5

、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.