Symbol

Parameter

Value

Unit

Ambient Operating Temperature

– 40 to 125

°C

Storage Temperature Range

– 65 to 150

°C

Supply Voltage

– 0.3 to 6.5

V

Input/Output Voltage

V

Input Voltage

– 0.3 to 6.5

V

Electrostatic Discharge Voltage (Human Body model)

(2)

4000

V

Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may

cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions

above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating

conditions for extended periods may affect device reliability. Refer also to the SGS-THOMSON SURE Program and other

relevant quality documents.

2. 100pF through 1500

Ω; MIL-STD-883C, 3015.7

Mode

E

G

W

DQ0 - DQ7

Standby

1

X

X

Hi-Z

Output Disable

X

1

X

Hi-Z

Write Disable

X

X

1

Hi-Z

Read

0

0

1

Data Out

Write

0

1

0

Data In

Chip Erase

0

V

0

Hi-Z

± 5%.

OPERATION

In order to prevent data corruption and inadvertent

Access to the memory in write mode is allowed after

a power-up as specified in Table 7.

Read

The M28C17 is accessed like a static RAM. When

E and G are low with W high, the data addressed

is presented on the I/O pins. The I/O pins are high

impedance when either G or E is high.

Write

Write operations are initiated when both W and E

are low and G is high.The M28C17 supports both

E and W controlled write cycles. The Address is

latched by the falling edge of E or W which ever

occurs last and the Data on the rising edge of E or

W which ever occurs first. Once initiated the write

operation is internally timed until completion.

Page Write

Page write allows up to 64 bytes to be consecu-

tively latched into the memory prior to initiating a

programming cycle. All bytes must be located in a

single page address, that is A6-A10 must be the

same for all bytes. The page write can be initiated

during any byte write operation.

Following the first byte write instruction the host

may send another address and data with a mini-

the internal programming cycle will start.

Chip Erase

The contents of the entire memory may be erased

to FFh by use of the Chip Erase command by

setting Chip Enable (E) Low and Output Enable

low pulse is applied to the Write Enable pin.

3/17

M28C17