APM32E103RCT6-R datasheet(49/79 Pages) GEEHY

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Parameter

Peripheral

Typical value (1) TA =25℃, VDD =3.3V

Unit

ADC3

0.28

TMR1

0.4

TMR8

0.4

SPI1

0.13

USART1

0.2

Note: It is obtained from a comprehensive evaluation and is not tested in production.

5.8.

Wake-up time in low power mode

The measurement of wake-up time in low power mode is from the start of wake-up event to the

time when the user program reads the first instruction, in which VDD=VDDA.

Table 33 Wake Up Time in Low-power Mode

Symbol

Parameter

Conditions

Min

Typical value (TA=25

℃)

Max

Unit

3.3V

3.6V

tWUSLEEP

Wake-up

from sleep

mode

0.52

0.61

0.60

0.57

0.65

μs

tWUSTOP

Wake up from

stop mode

The voltage regulator is in run mode

1.83

2.24

1.91

1.86

2.26

The voltage regulator is in low power

mode

2.66

4.18

2.95

2.82

4.61

tWUSTDBY

Wake up from

standby

mode

59.56

76.40

63.74

61.29

84.56

Note: It is obtained from a comprehensive evaluation and is not tested in production.

5.9.

Pin characteristics

5.9.1.

I/O pin characteristics

Table 34 DC Characteristics (test condition of VDD=2.7~3.6V, TA=-40~105

℃)

Symbol

Parameter

Conditions

Minimum

value

Typical

value

Maximum

value

Unit

VIL

Low level input voltage

CMOS port

-0.5

0.35VDD

VIH

High level input voltage

0.65VDD

VDD+0.5

VIL

Low level input voltage

TTL port

-0.5

0.8

VIH

High level input voltage, Standard

I/O port

VDD+0.5

High level input voltage, I/O FT port

5.5

Vhys

Standard I/O Schmitt trigger voltage

hysteresis

200

I/O FT Schmitt trigger voltage

hysteresis

5%VDD

Ilkg

Input leakage current

VSS

≤ VIN ≤ VDD

Standard I/O port

μA

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