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M28W640ECT 数据表(PDF) 26 Page - STMicroelectronics |
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M28W640ECT 数据表(HTML) 26 Page - STMicroelectronics |
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26 / 55 page ![]() M28W640ECT, M28W640ECB 26/55 Table 17. Write AC Characteristics, Write Enable Controlled Note: 1. Sampled only, not 100% tested. 2. Applicable if VPP is seen as a logic input (VPP < 3.6V). 3. To be characterized. Symbol Alt Parameter M28W640EC Unit 70 85 90 10 tAVAV tWC Write Cycle Time Min 70(3) 85 90 100 ns tAVWH tAS Address Valid to Write Enable High Min 45 45 50 50 ns tDVWH tDS Data Valid to Write Enable High Min 45 45 50 50 ns tELWL tCS Chip Enable Low to Write Enable Low Min 0 0 0 0 ns tELQV Chip Enable Low to Output Valid Min 70(3) 85 90 100 ns tQVVPL (1,2) Output Valid to VPP Low Min 0 0 0 0 ns tQVWPL Output Valid to Write Protect Low Min 0 0 0 0 ns tVPHWH (1) tVPS VPP High to Write Enable High Min 200 200 200 200 ns tWHAX tAH Write Enable High to Address Transition Min 0 0 0 0 ns tWHDX tDH Write Enable High to Data Transition Min 0 0 0 0 ns tWHEH tCH Write Enable High to Chip Enable High Min 0 0 0 0 ns tWHEL Write Enable High to Chip Enable Low Min 25 25 30 30 ns tWHGL Write Enable High to Output Enable Low Min 20 20 30 30 ns tWHWL tWPH Write Enable High to Write Enable Low Min 25 25 30 30 ns tWLWH tWP Write Enable Low to Write Enable High Min 45 45 50 50 ns tWPHWH Write Protect High to Write Enable High Min 45 45 50 50 ns |
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