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M28W640ECT 数据表(PDF) 41 Page - STMicroelectronics |
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M28W640ECT 数据表(HTML) 41 Page - STMicroelectronics |
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41 / 55 page ![]() 41/55 M28W640ECT, M28W640ECB Table 29. Device Geometry Definition Offset Word Mode Data Description Value 27h 0017h Device Size = 2n in number of bytes 8 MByte 28h 29h 0001h 0000h Flash Device Interface Code description x16 Async. 2Ah 2Bh 0003h 0000h Maximum number of bytes in multi-byte program or page = 2n 8 2Ch 0002h Number of Erase Block Regions within the device. It specifies the number of regions within the device containing contiguous Erase Blocks of the same size. 2 2Dh 2Eh 007Eh 0000h Region 1 Information Number of identical-size erase block = 007Eh+1 127 2Fh 30h 0000h 0001h Region 1 Information Block size in Region 1 = 0100h * 256 byte 64 KByte 31h 32h 0007h 0000h Region 2 Information Number of identical-size erase block = 0007h+1 8 33h 34h 0020h 0000h Region 2 Information Block size in Region 2 = 0020h * 256 byte 8 KByte 2Dh 2Eh 0007h 0000h Region 1 Information Number of identical-size erase block = 0007h+1 8 2Fh 30h 0020h 0000h Region 1 Information Block size in Region 1 = 0020h * 256 byte 8 KByte 31h 32h 007Eh 0000h Region 2 Information Number of identical-size erase block = 007Eh=1 127 33h 34h 0000h 0001h Region 2 Information Block size in Region 2 = 0100h * 256 byte 64 KByte |
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