Symbol

Parameter

Value

Unit

Ambient Operating Temperature

–40 to 85

°C

Temperature Under Bias

–50 to 125

°C

Storage Temperature

–65 to 150

°C

(2)

Input or Output Voltages

–0.6 to 5

V

Supply Voltage

–0.6 to 5

V

(2)

A9, G, EF Voltage

–0.6 to 13.5

V

Notes: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings"

may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other

conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum

Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other

relevant quality documents.

2. Minimum Voltage may undershoot to –2V during transition and for less than 20ns.

An additional 64 bytes of EPROM are One Time

Programmable.

The M39208 EEPROM memory block may be writ-

ten by byte or by page of 64 bytes and the integrity

DESCRIPTION (Cont’d)

A3

A0

DQ0

A7

A4

A13

A11

DQ7

A14

VSS

G

DQ5

DQ1

DQ2

DQ3

DQ4

DQ6

A17

W

A16

A12

VCC

A15

AI02587

M39208

8

1

9

16

17

24

25

32

A9

A10

A8

EF

A6

A1

A5

A2

EE

Figure 2. TSOP Pin Connections

of the data can be secured with the help of the

Software Data Protection (SDP).

The M39208 Flash Memory block offers 4 sectors

of 64 Kbytes, each sector may be erased individu-

ally, and programmed Byte-by-Byte. Each sector

can be separately protected and unprotected

against program and erase. Sector erasure may be

suspended, while data is read from other sectors

of the Flash memory block (or EEPROM memory

block), and then resumed.

During a Program or Erase cycle in the Flash

memory block or during a Write in the EEPROM

memory block, the status of the M39208 internal

logic can be read on the Data Outputs DQ7,DQ6,

DQ5 and DQ3.

PIN DESCRIPTION

Address Inputs (A0-A17). The address inputs for

the memory array are latched during a write opera-

tion. A0-A12 access locations in the EEPROM

memory block A0-A17 access locations in the Flash

memory block. The memory block selected is given

by the state on the EE and EF inputs respectively.

address input, additional specific areas can be

accessed: Read the Manufacturer identifier, Read

the Flash block identifier, Read/Write the EEPROM

block identifier, Verify the Flash Sector Protection

Status.

Data Input/Output (DQ0-DQ7). A write operation

inputs one byte which is latched when EE (or EF)

and Write Enable W are driven active.

Data read is valid when one Chip Enable (Chip

Enable Flash or Chip Enable EEPROM) and Out-

put Enable are driven active. The output is high

2/30

M39208