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M39208 数据表(PDF) 6 Page - STMicroelectronics |
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M39208 数据表(HTML) 6 Page - STMicroelectronics |
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6 / 30 page  POWER SUPPLY and CURRENT CONSUMP- TION EEPROM Power Down. The M39208 can be set with the EEPROM in power down with the help of the EEPROM power down instruction (see Table 4). Once the EEPROM power down instruction is decoded, the EEPROM block cannot be accessed unless a further Return instruction is decoded. Deep Power Down. The M39208 can be set in the lowest ICC consumption mode with the help of the Deep Power Down instruction (see Table 4). Once the instruction is decoded, the device is set in a sleep mode until a Reset instruction is decoded. Power Up. The M39208 internal logic is reset upon a power-up condition to Read memory status. Any Write operation in EEPROM is inhibited during the first 5 ms following the power-up. Either EF, EE or W must be tied to VIH during Power-up for the maximum security of the data contents and to remove the possibility of a byte being written on the first rising edge of EF, EE or W. Any write cycle initiation is locked when Vcc is below VLKO. READ Read operations and instructions can be used to: – read the contents of the Memory Array (Flash block and EEPROM block) – read the Memory Array (Flash block and EEPROM block) status and identifiers. Read data (Flash and EEPROM blocks) Both Chip Enable EF (or EE) and Output Enable (G) must be low in order to read the data from the memory. Read the Manufacturer Identifier The manufacturer’s identifier can be read with two methods: a Read operation or a Read instruction. Read Operation. The manufacturer’s identifier can be read with a Read operation with specific logic levels applied on A0, A1, A6 and the VID level (VID = 12V + 0.5V) on A9 (see Table 5). Read Instruction. The manufacturer’s identifier can also be read with a single instruction composed of 4 operations: 3 specific Write operations (see Table 4) and a Read which outputs the Manufac- turer identifier, the Flash block identifier or the Flash sector protection status. Read the Flash Block Identifier The Flash block identifier can be read with two methods: a Read operation or a Read instruction. Read Operation. The Flash block identifier (t.b.d.) can be read with a single Read operation with specific logic levels applied on A0, A1, A6 and the VID level on A9 (see Table 5). Read Instruction. The Flash block identifier can also be read with an instruction composed of 4 operations: 3 specific Write operations and a Read (see Table 4). Identifier EF EE G W A0A1A6 A9 Other Addresses DQ0 - DQ7 Read the Manufacturer Identifier VIL VIH VIL VIH VIL VIL VIL VID Don’t Care 20h Read the Flash Block Identifier VIL VIH VIL VIH VIH VIL VIL VID Don’t Care t.b.d. Read the EEPROM Block Identifier VIH VIL VIL VIH XX VIL VID Don’t Care 64 bytes user defined Note: X = Don’t Care. Table 5. Device Identifiers 6/30 M39208 |
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