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M50LPW040 数据表(PDF) 13 Page - STMicroelectronics

部件名 M50LPW040
功能描述  4 Mbit 512Kb x8, Uniform Block 3V Supply Low Pin Count Flash Memory
PDF  36 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M50LPW040 数据表(HTML) 13 Page - STMicroelectronics

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M50LPW040
During the Block Erase operation the memory will
only accept the Read Status Register command
and the Program/Erase Suspend command. All
other commands will be ignored. Typical Block
Erase times are given in Table 12.
The Block Erase command sets all of the bits in
the block to ‘1’. All previous data in the block is
lost.
See Figure 18, Block Erase Flowchart and Pseudo
Code, for a suggested flowchart on using the
Block Erase command.
Clear Status Register Command. The Clear Sta-
tus Register command can be used to reset bits 1,
3, 4 and 5 in the Status Register to ‘0’. One Bus
Write is required to issue the Clear Status Register
command. Once the command is issued the mem-
ory returns to its previous mode, subsequent Bus
Read operations continue to output the same data.
The bits in the Status Register are sticky and do
not automatically return to ‘0’ when a new Program
or Erase command is issued. If an error occurs
then it is essential to clear any error bits in the Sta-
tus Register by issuing the Clear Status Register
command before attempting a new Program or
Erase command.
Program/Erase Suspend Command. The
Pro-
gram/Erase Suspend command can be used to
pause a Program or Block Erase operation. One
Bus Write cycle is required to issue the Program/
Erase Suspend command and pause the Pro-
gram/Erase Controller. Once the command is is-
sued it is necessary to poll the Program/Erase
Controller Status bit to find out when the Program/
Erase Controller has paused; no other commands
will be accepted until the Program/Erase Control-
ler has paused. After the Program/Erase Control-
ler has paused, the memory will continue to output
the Status Register until another command is is-
sued.
During the polling period between issuing the
Program/Erase
Suspend
command
and
the
Program/Erase Controller pausing it is possible for
the operation to complete. Once Program/Erase
Controller Status bit indicates that the Program/
Erase Controller is no longer active, the Program
Suspend Status bit or the Erase Suspend Status
bit can be used to determine if the operation has
completed or is suspended. For timing on the
delay
between
issuing
the
Program/Erase
Suspend
command
and
the
Program/Erase
Controller pausing see Table 12.
During
Program/Erase
Suspend
the
Read
Memory Array, Read Status Register, Read
Electronic Signature and Program/Erase Resume
commands will be accepted by the Command
Interface. Additionally, if the suspended operation
was Block Erase then the Program command will
also be accepted; only the blocks not being erased
may be read or programmed correctly.
See Figures 16, Program Suspend & Resume
Flowchart and Pseudo Code, and 19, Erase
Suspend & Resume Flowchart and Pseudo Code,
for suggested flowcharts on using the Program/
Erase Suspend command.
Program/Erase Resume Command. The
Pro-
gram/Erase Resume command can be used to re-
start
the
Program/Erase
Controller
after
a
Program/Erase Suspend has paused it. One Bus
Write cycle is required to issue the Program/Erase
Resume command. Once the command is issued
subsequent Bus Read operations read the Status
Register.
Table 12. Program and Erase Times
(TA = 0 to 70°C or –20 to 85°C; VCC = 3.0 to 3.6V)
Note: 1. TA = 25°C, VCC = 3.3V
2. This time is obtained executing the Quadruple Byte Program Command.
3. Sampled only, not 100% tested.
Parameter
Interface
Test Condition
Min
Typ (1)
Max
Unit
Byte Program
10
200
µs
Quadruple Byte Program
A/A Mux
VPP = 12V ± 5%
10
200
µs
Chip Erase
A/A Mux
VPP = 12V ± 5%
5sec
Block Program
A/A Mux
VPP = 12V ± 5%
0.1 (2)
5
sec
VPP = VCC
0.4
5
sec
Block Erase
VPP = 12V ± 5%
0.75
8
sec
VPP = VCC
110
sec
Program/Erase Suspend to Program pause (3)
5
µs
Program/Erase Suspend to Block Erase pause (3)
30
µs



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