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M50LPW116 数据表(PDF) 11 Page - STMicroelectronics

部件名 M50LPW116
功能描述  16 Mbit 2Mb x8, Boot Block 3V Supply Low Pin Count Flash Memory
PDF  36 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M50LPW116 数据表(HTML) 11 Page - STMicroelectronics

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M50LPW116
command is issued subsequent Bus Read opera-
tions read the Status Register until another com-
mand is issued. See the section on the Status
Register for details on the definitions of the Status
Register bits.
Read Electronic Signature Command. The Read
Electronic Signature command is used to read the
Manufacturer Code and the Device Code. One
Bus Write cycle is required to issue the Read
Electronic
Signature
command.
Once
the
command
is
issued
subsequent
Bus
Read
operations read the Manufacturer Code or the
Device Code until another command is issued.
After the Read Electronic Signature Command is
issued the Manufacturer Code and Device Code
can be read using Bus Read operations using the
addresses in Table 10.
Program Command. The
Program
command
can be used to program a value to one address in
the memory array at a time. Two Bus Write
operations are required to issue the command; the
second Bus Write cycle latches the address and
data in the internal state machine and starts the
Program/Erase Controller. Once the command is
issued subsequent Bus Read operations read the
Status Register. See the section on the Status
Register for details on the definitions of the Status
Register bits.
If the address falls in a protected block then the
Program operation will abort, the data in the
memory array will not be changed and the Status
Register will output the error.
During the Program operation the memory will
only accept the Read Status Register command
and the Program/Erase Suspend command. All
other commands will be ignored. Typical Program
times are given in Table 12.
Note that the Program command cannot change a
bit set at ‘0’ back to ‘1’ and attempting to do so will
not cause any modification on its value. One of the
Erase commands must be used to set all of the
bits in the block to ‘1’.
See Figure 13, for a suggested flowchart on using
the Program command.
Quadruple Byte Program Command (A/A Mux
Mode). The Quadruple Byte Program Command
can be used to program four adjacent bytes in the
memory array at a time. The four bytes must differ
only for the addresses A0 and A1. Programming
should not be attempted when VPP is not at VPPH.
Five Bus Write operations are required to issue the
command. The second, the third and the fourth
Bus Write cycle latches respectively the address
and data of the first, the second and the third byte
in the internal state machine. The fifth Bus Write
cycle latches the address and data of the fourth
byte in the internal state machine and starts the
Program/Erase Controller. Once the command is
issued subsequent Bus Read operations read the
Status Register. See the section on the Status
Register for details on the definitions of the Status
Register bits.
During the Quadruple Byte Program operation the
memory will only accept the Read Status register
command and the Program/Erase Suspend com-
mand. All other commands will be ignored. Typical
Quadruple Byte Program times are given in Table
12.
Note that the Quadruple Byte Program command
cannot change a bit set to ‘0’ back to ‘1’ and
attempting to do so will not cause any modification
on its value. One of the Erase commands must be
used to set all of the bits in the block to ‘1’.
See Figure 14, for a suggested flowchart on using
the Quadruple Byte Program command.
Chip Erase Command. The Chip Erase Com-
mand can be only used in A/A Mux mode to erase
the entire chip at a time. Erasing should not be at-
tempted when VPP is not at VPPH. The operation
can also be executed if VPP is below VPPH, but re-
sult could be uncertain. Two Bus Write operations
are required to issue the command and start the
Program/Erase Controller. Once the command is
issued subsequent Bus Read operations read the
Status Register. See the section on the Status
Register for details on the definitions of the Status
Register bits. During the Chip Erase operation the
memory will only accept the Read Status Register
command. All other commands will be ignored.
Typical Chip Erase times are given in Table 12.
The Chip Erase command sets all of the bits in the
memory to ‘1’. See Figure 16, Chip Erase Flow-
chart and Pseudo Code (A/A Mux Interface Only),
for a suggested flowchart on using the Chip Erase
command.
Block Erase Command. The Block Erase com-
mand can be used to erase a block. Two Bus Write
operations are required to issue the command; the
second Bus Write cycle latches the block address
in the internal state machine and starts the Pro-
gram/Erase Controller. Once the command is is-
sued subsequent Bus Read operations read the
Status Register. See the section on the Status
Register for details on the definitions of the Status
Register bits.
If the block is protected then the Block Erase
operation will abort, the data in the block will not be
Table 10. Read Electronic Signature
Code
Address
Data
Manufacturer Code
000000h
20h
Device Code
000001h
30h



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