8.7 Glossary

TI Glossary

This glossary lists and explains terms, acronyms, and definitions.

9 Revision History

NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Revision W (May 2025) to Revision X (May 2025)

Page

• Updated the numbering format for tables, figures, and cross-references throughout the document................. 1

• Added new silicon ground pin current spec........................................................................................................6

Changes from Revision V (September 2024) to Revision W (May 2025)

Page

• Updated DRB (VSON) for DRB0008A package outline..................................................................................... 4

• Added new silicon DBV thermals....................................................................................................................... 4

• Changed discussion of EN and added information about EN turning the regulator on in Enable Pin and

Shutdown section............................................................................................................................................. 18

• Deleted Package Mounting section.................................................................................................................. 25

• Changed legacy chip to legacy silicon in Device Nomenclature table..............................................................28

Changes from Revision U (January 2015) to Revision V (September 2024)

Page

• Updated the numbering format for tables, figures, and cross-references throughout the document................. 1

• Added M3 devices to document and added the M3 new silicon Thermal Information table.............................. 1

• Changed max output current.............................................................................................................................. 4

• Changed VFB typical value................................................................................................................................ 6

• Added new silicon current limit........................................................................................................................... 6

• Added new silicon plots to Typical Characteristics section.................................................................................7

• Changed Output current value from 500mA to 400mA in Design Parameters (Fixed-Voltage Version) table..20

• Changed Detailed Design Procedure section: Changed dropout voltage value from 0.5A to 0.4A, changed

maximum dropout voltage from an estimation to 200mV ................................................................................ 20

• Added new silicon plots to Application Curves section.....................................................................................23

• Added Layout Example for the DBV Package Adjustable Version through Layout Example for the DCQ

Package Fixed Version figures to Layout Examples section............................................................................25

• Added M3 information to Device Nomenclature section...................................................................................28

10 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most

current data available for the designated devices. This data is subject to change without notice and revision of

this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

www.ti.com

TPS736

SBVS038X – SEPTEMBER 2003 – REVISED MAY 2025

Copyright © 2025 Texas Instruments Incorporated

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