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APM32F003F6P6-R 数据表(PDF) 26 Page - Geehy Semiconductor Co., Ltd.

部件名 APM32F003F6P6-R
功能描述  Arm® Cortex®-M0 based 32-bit MCU
PDF  56 Pages
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制造商  GEEHY [Geehy Semiconductor Co., Ltd.]
网页  https://global.geehy.com/
标志 GEEHY - Geehy Semiconductor Co., Ltd.

APM32F003F6P6-R 数据表(HTML) 26 Page - Geehy Semiconductor Co., Ltd.

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Symbol
description
Min
Max
Unit
VIN
Input voltage on the true open drain pin
VSS-0.3
6.5
Input voltage on other pins
VSS-0.3
VDD+0.3
|VDDx-VDD|
Voltage difference between different power supply
pins
-
50
mV
|VSSx-VSS|
Voltage difference between different grounding
pins
-
50
5.3.3.
Maximum rated current characteristics
Table 18 Maximum rated current characteristics
Symbol
description
Max
Unit
IVDD
Total current through VDD power line (supply current)
100
mA
IVSS
Total current through VSS ground (outflow current)
80
IIO
Current sink on any I/O and control pins
20
Pull current on any I/O and control pins
-20
IINJ(PIN)
Injection current of NRST pin
±4
Injection current of OSC_IN pin of HXT and OSC_IN pin of
LXT
±4
Injection current of other pins
±4
ΣIINJ(PIN)
Total injection current on all I/O and control pins
±20
5.3.4.
Maximum electrostatic characteristics
Table 19 Electrostatic discharge (ESD)
（1）
Symbol
Parameter
Condition
Max
Unit
VESD(HBM)
Electrostatic discharge voltage (manikin)
TA=+25°C
8000
V
VESD(CDM)
Electrostatic discharge voltage (charging
equipment model)
TA=+25°C
2000
Note: Samples are measured by a third-party testing organization and are not
tested in production.
5.3.5.
Static latch
Table 20 Static latch
Symbol
Parameter
Condition
Type
LU
Static latch class
TA=+25°C/105°C
A



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