M59MR032C datasheet(1/49 Pages) STMICROELECTRONICS

部件名	M59MR032C

功能描述	32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory

PDF	49 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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April 2001

M59MR032C

M59MR032D

32 Mbit (2Mb x16, Mux I/O, Dual Bank, Burst)

1.8V Supply Flash Memory

s

SUPPLY VOLTAGE

–VDD = VDDQ = 1.65V to 2.0V for Program,

Erase and Read

–VPP = 12V for fast Program (optional)

s

MULTIPLEXED ADDRESS/DATA

s

SYNCHRONOUS / ASYNCHRONOUS READ

– Configurable Burst mode Read

– Page mode Read (4 Words Page)

– Random Access: 100ns

s

PROGRAMMING TIME

– 10µs by Word typical

– Double Word Programming Option

s

MEMORY BLOCKS

– Dual Bank Memory Array: 8 Mbit - 24 Mbit

– Parameter Blocks (Top or Bottom location)

s

DUAL BANK OPERATIONS

– Read within one Bank while Program or

Erase within the other

– No delay between Read and Write operations

s

BLOCK PROTECTION/UNPROTECTION

– All Blocks protected at Power-up

– Any combination of Blocks can be protected

s

COMMON FLASH INTERFACE (CFI)

s

64 bit SECURITY CODE

s

ERASE SUSPEND and RESUME MODES

s

100,000 PROGRAM/ERASE CYCLES per

BLOCK

s

ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M59MR032C: A4h

– Bottom Device Code, M59MR032D: A5h

BGA

µBGA

LFBGA54 (ZC)

10 x 4 ball array

µBGA46 (GC)

10 x 4 ball array

Figure 1. Logic Diagram

AI90109

5

A16-A20

W

ADQ0-ADQ15

VDD

M59MR032C

M59MR032D

E

VSS

16

G

RP

WP

VDDQ VPP

L

K

WAIT

BINV

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