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AS1130 数据表(PDF) 9 Page - ams-OSRAM AG |
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AS1130 数据表(HTML) 9 Page - ams-OSRAM AG |
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9 / 67 page ![]() Page 8 ams Datasheet Document Feedback [v2-01] 2016-Oct-12 AS1130 − Electrical Characteristics Note(s): 1. Guaranteed by design. 2. Figure 8: Logic Inputs/Outputs Characteristics Note(s): 1. Available on request, see Ordering & Contact Information. Open Detection Level Threshold VDD- 0.4 VDD- 0.1 V Short Detection Level Threshold 770 900 mV fOSC Oscillator Frequency 0.9 1 1.1 MHz fREFRESH Display Scan Rate 12x11 matrix 0.29 0.33 0.36 kHz tRSTN Reset Pulse Width Low 500 ns Symbol Parameter Conditions Min Typ Max Unit IIH, IIL Logic Input Current VIN = 0V or VDD -1 1 μA VIH CMOS Logic High Input Voltage 0.7 x VDD V VIL CMOS Logic Low Input Voltage 0.3 x VDD V ΔVI CMOS Hysteresis Voltage 0.3 V VIH Mobile Logic High Input Voltage (1) 1.6 V VIL Mobile Logic Low Input Voltage(1) 0.6 V ΔVI Hysteresis Voltage (1) 0.1 V VOL(SDA) SDA Output Low Voltage ISINK = 3mA 0.4 V VOL(IRQ) IRQ Output Low Voltage ISINK = 3mA 0.4 V VOL(SYNC_ OUT) Sync Clock Output Low Voltage ISINK = 1mA 0.4 V VOH(SYNC_ OUT) Sync Clock Output High Voltage ISOURCE = 1mA VDD-0.4 V Capacitive Load for Each Bus Line 400 pF Symbol Parameter Conditions Min Typ Max Unit ISEG Imax Imin – Imax Imin + --------------------------- 100 × = |
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