R5F10DMDCLFB datasheet(130/139 Pages) RENESAS

130 / 139 page

RL78/D1A

4. ELECTRICAL SPECIFICATIONS (L GRADE PRODUCT)

R01DS0463EJ0120 Rev. 1.20

Page 130 of 135

Mar 31, 2026

4.9 Capacitance Connected to REGC

TA = -40 to +105

°C

Items

Symbols

Conditions

MIN.

TYP.

MAX.

Unit

Capacitance

CREG

0.47

1.0

μF

4.10 Flash programming characteristics

TA = -40 to +105

°C, 2.7 V ≤ EVDD0 = EVDD1 ≤ VDD ≤ 5.5 V, VSS = EVSS0 = EVSS1 = 0 V

Items

Symbols

Conditions

MIN.

TYP.

MAX.

Unit

VDD supply current

IDD

Programming current

12.2

System Clcok

frequency

fCLK

2.7 V

≤ VDD ≤ 5.5 V

MHz

Number of

Code Flash

rewritesNotes 1, 2, 3

Cerwr

Retained for 20 years, TA = +85

°C Note 4

1000

Times

Number of

Data Flash

rewritesNotes 1, 2, 3

Cerwr

Retained for 20 years, TA = +85

°C Note 4

10000

Times

Notes 1.

1 erase + 1 write after the erase is regarded as 1 rewrite.

The retaining years are until next rewrite after the rewrite.

2. When using flash memory programmer and Renesas Electronics self programming library.

3. These are the characteristics of the flash memory and the results obtained from reliability testing by Renesas

Electronics Corporation.

4. The specified data retention time is given under the condition that the average temperature (TA) is 85°C or

below.

Caution Different voltage between EVDD and VDD is allowed only when LCDM register is initial value.

R5F10DMDCLFB 数据表(PDF) 130 Page - Renesas Technology Corp

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