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M48T02 数据表(PDF) 10 Page - STMicroelectronics |
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M48T02 数据表(HTML) 10 Page - STMicroelectronics |
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10 / 19 page ![]() M48T02, M48T12 10/19 Data Retention Mode With valid VCC applied, the M48T02/12 operates as a conventional BYTEWIDE™ static RAM. Should the supply voltage decay, the RAM will au- tomatically power-fail deselect, write protecting it- self when VCC falls within the VPFD (max), VPFD (min) window. All outputs become high imped- ance, and all inputs are treated as “don't care.” Note: A power failure during a WRITE cycle may corrupt data at the currently addressed location, but does not jeopardize the rest of the RAM's con- tent. At voltages below VPFD (min), the user can be assured the memory will be in a write protected state, provided the VCC fall time is not less than tF. The M48T02/12 may respond to transient noise spikes on VCC that reach into the deselect window during the time the device is sampling VCC. There- fore, decoupling of the power supply lines is rec- ommended. The power switching circuit connects external VCC to the RAM and disconnects the battery when VCC rises above VSO. As VCC rises, the battery voltage is checked. If the voltage is too low, an internal Battery Not OK (BOK) flag will be set. The BOK flag can be checked after power up. If the BOK flag is set, the first WRITE attempted will be blocked. The flag is automatically cleared after the first WRITE, and normal RAM operation resumes. Fig- ure 9 illustrates how a BOK check routine could be structured. For more information on a Battery Storage Life re- fer to the Application Note AN1012. Figure 9. Checking the BOK Flag Status READ DATA AT ANY ADDRESS AI00607 IS DATA COMPLEMENT OF FIRST READ? (BATTERY OK) POWER-UP YES NO WRITE DATA COMPLEMENT BACK TO SAME ADDRESS READ DATA AT SAME ADDRESS AGAIN NOTIFY SYSTEM OF LOW BATTERY (DATA MAY BE CORRUPTED) WRITE ORIGINAL DATA BACK TO SAME ADDRESS (BATTERY LOW) CONTINUE |
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