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RZ/N2L 数据表(PDF) 71 Page - Renesas Technology Corp |
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RZ/N2L 数据表(HTML) 71 Page - Renesas Technology Corp |
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71 / 128 page ![]() CKIO Tp Trr A25 to A0 tAD1 tCSD1 tRWD1 A12/A11*1 RD/WR# tCSD1 DACK*2 Tpw Trr tRWD1 D15 to D0 BS# tAD1 CS3#, CS2# RAS# tRASD1 tRASD1 tCASD1 CAS# tCASD1 DQMLU, DQMLL CKE Trc Trc tRWD1 tCSD1 tCSD1 tRASD1 tRASD1 (Hi-Z) Trc Tmw Trc Tde PALL REF REF MRS tAD1 tAD1 tAD1 tCSD1 tCSD1 tCSD1 tCSD1 tRWD1 tRWD1 tRASD1 tRASD1 tRASD1 tRASD1 tCASD1 tCASD1 tCASD1 tCASD1 Note 1. Address pin to be connected to A10 of SDRAM. Note 2. DACK is waveform when active-low is specified. Figure 2.35 Synchronous DRAM mode register set timing (WTRP = 1 cycle) 2.5.4 DMAC Timing Table 2.23 DMAC timing Conditions: VOH = VCC33 × 0.5, VOL = VCC33 × 0.5, C = 15 pF (CKIO), 30 pF (others), Tjmin = −40°C Parameter Symbol Min.*1 Max. Unit Reference figure DMAC DREQ pulse width tDRQW tIcyc × 2 — ns Figure 2.36 DACK and TEND delay time tDACD 0 10 ns Figure 2.37 Note 1. tIcyc: ICLK cycle RZ/N2L Datasheet 2. Electrical Characteristics R01DS0397EJ0140 Rev.1.40 Mar 31, 2026 Page 71 of 128 |
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