PSD813F1 datasheet(76/120 Pages) STMICROELECTRONICS

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The

PSD813F1

Functional

Blocks

(cont.)

9.5.3 Reset and Power On Requirement

Power On Reset

Upon power up the PSD813F1 requires a reset pulse of tNLNH-PO (minimum 1ms) after

VCC is steady. During this time period the device loads internal configurations, clears some

of the registers and sets the Flash or EEPROM into operating mode. After the rising edge of

reset, the PSD813F1 remains in the reset state for an additional tOPR (minimum 120 ns)

nanoseconds before the first memory access is allowed.

The PSD813F1 Flash or EEPROM memory is reset to the read array mode upon power up.

The FSi and EESi select signals along with the write strobe signal must be in the false state

during power-up reset for maximum security of the data contents and to remove the possi-

bility of a byte being written on the first edge of a write strobe signal. The PSD

automatically prevents write strobes from reaching the EEPROM memory array for about

5 ms (tEEHWL). Any Flash memory write cycle initiation is prevented automatically when

VCC is below VLKO.

Warm Reset

Once the device is up and running, the device can be reset with a much shorter pulse of

tNLNH (minimum 150 ns). The same tOPR time is needed before the device is operational

after warm reset. Figure 32 shows the timing of the power on and warm reset.

PSD813F1-A

Preliminary

OPERATING LEVEL

POWER ON RESET

VCC

RESET

t NLNH–PO

t OPR

t NLNH

t OPR

WARM

RESET

Figure 32. Power On and Warm Reset Timing

I/O Pin, Register and PLD Status at Reset

Table 33 shows the I/O pin, register and PLD status during power on reset, warm reset and

power down mode. PLD outputs are always valid during warm reset, and they are valid in

power on reset once the internal PSD configuration bits are loaded. This loading of PSD is

completed typically long before the VCC ramps up to operating level. Once the PLD is

active, the state of the outputs are determined by the PSDabel equations.

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