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STN3PF06 数据表(PDF) 1 Page - STMicroelectronics |
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STN3PF06 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 12 page ![]() March 2008 Rev 4 1/12 12 STN3PF06 P-channel 60 V - 0.20 Ω - 2.5 A - SOT-223 STripFET™ II Power MOSFET Features ■ Extremely dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization Application ■ Switching applications Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Figure 1. Internal schematic diagram Type VDSS RDS(on) max ID STN3PF06 60 V < 0.22 Ω 2.5 A 1 2 2 3 SOT-223 Table 1. Device summary Order code Marking Package Packaging STN3PF06 N3PF06 SOT-223 Tape and reel www.st.com |
类似零件编号 - STN3PF06 |
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类似说明 - STN3PF06 |
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