STN3PF06 datasheet(4/12 Pages) STMICROELECTRONICS

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Electrical characteristics

STN3PF06

4/12

Electrical characteristics

(TCASE=25 °C unless otherwise specified)

Note:

For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 250 µA, VGS = 0

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = Max rating

VDS = Max rating, TC=125 °C

µA

ID(on)

On state drain current

VDS > ID(on) x RDS(on)max,

VGS =10 V

2.5

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ±20 V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 1.5 A

0.20

0.22

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

gfs

Forward transconductance

VDS > ID(on) x RDS(on)max,

ID= 1.25 A

1.5

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

850

230

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

ID = 12 A, VDD = 48 V,

VGS = 10 V

(see Figure 14)

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