STN3PF06 datasheet(5/12 Pages) STMICROELECTRONICS

部件名	STN3PF06

功能描述	P-channel 60 V - 0.20 Ω - 2.5 A - SOT-223 STripFET??II Power MOSFET

PDF	12 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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5 / 12 page

STN3PF06

Electrical characteristics

5/12

Note:

For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

Rise time

VDD= 30 V, ID=6 A,

RG=4.7 Ω, VGS=10 V

(see Figure 13)

td(off)

Turn-off delay time

Fall time

VDD= 30 V, ID=6 A,

RG=4.7 Ω, VGS=10 V

(see Figure 13)

tr(Voff)

Off-voltage rise time

Fall time

Cross-over time

Vclamp= 48 V, ID=12 A,

RG=4.7 Ω, VGS=10 V

(see Figure 13)

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min

Typ.

Max

Unit

ISD

ISDM

(1)

Pulse width limited by Tjmax

Source-drain current

Source-drain current (pulsed)

2.5

VSD

(2)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 1.5 A, VGS = 0

1.2

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 12 A, di/dt = 100 A/µs

VDD = 30 V, Tj =150 °C

100

260

5.2

µC

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