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DS.ST14C02C/9811V2

ST14C02C

Memory Card IC

2 Kbit (256 x 8) Serial I2C Bus EEPROM

s

Single Supply Voltage (3 V to 5.5 V)

s

s

BYTE and MULTBYTE WRITE (up to 4 Bytes)

s

PAGE WRITE (up to 8 Bytes)

s

BYTE, RANDOM and SEQUENTIAL READ

Modes

s

Self-Timed Programming Cycle

s

Automatic Address Incrementing

s

Enhanced ESD/Latch-Up Behavior

s

1 Million Erase/Write Cycles (minimum)

s

10 Year Data Retention (minimum)

DESCRIPTION

This device is an electrically erasable programma-

ble

memory

(EEPROM)

fabricated

with

STMicroelectronics’s High Endurance, Advanced

Polysilicon, CMOS technology. This guarantees

an endurance typically well above one million

Erase/Write cycles, with a data retention of 10

years. The memory operates with a power supply

as low as 3 V.

The device is available in wafer form (either sawn

or unsawn) and in micromodule form (on film).

This is a two wire serial interface that uses a bi-di-

rectional data bus and serial clock. The memory

carries a built-in 7-bit unique Device Type Identifi-

definition. Only one memory can be attached to

Figure 1. Logic Diagram

AI01162

SCL

VCC

ST14C02C

GND

SDA

MODE

Table 1. Signal Names

SDA

Serial Data/Address Input/

Output

SCL

Serial Clock

MODE

Write Mode

Supply Voltage

GND

Ground

Micromodule (D15)

Wafer

Micromodule (D20)