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ST6367 数据表(PDF) 14 Page - STMicroelectronics |
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ST6367 数据表(HTML) 14 Page - STMicroelectronics |
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14 / 84 page ![]() 14/84 ST6365, ST6375, ST6385 ST6367, ST6377, ST6387 MEMORY SPACES (Cont’d) EEPROM Description The data space of ST638x family from 00h to 3Fh is paged as described in Table 5. 384 bytes of EEPROM located in six pages of 64 bytes (pages 0,1,2,3,4 and 5, see Table 5). Through the programming of the Data RAM Bank Register (DRBR=E8h) the user can select the bank or page leaving unaffected the way to ad- dress the static registers. The way to address the “dynamic” page is to set the DRBR as described in Table 5 (e.g. to select EEPROM page 0, the DRBR has to be loaded with content 01h, see Data RAM/EEPROM/OSD RAM addressing for additional information). Bits 0, 1 and 7 of the DRBR are dedicated to the EEPROM. The EEPROM pages do not require dedicated in- structions to be accessed in reading or writing. The EEPROM is controlled by the EEPROM Con- trol Register (EECR=EAh). Any EEPROM location can be read just like any other data location, also in terms of access time. To write an EEPROM location takes an average time of 5 ms (10ms max) and during this time the EEPROM is not accessible by the Core. A busy flag can be read by the Core to know the EEPROM status before trying any access. In writing the EEPROM can work in two modes: Byte Mode (BMODE) and Parallel Mode (PMODE). The BMODE is the normal way to use the EEPROM and consists in accessing one byte at a time. The PMODE consists in accessing 8 bytes per time. EEPROM Control Register (EECR) Address: EAh - Read only/Write only Reset Value: D7. Not used Caution: This register contains at least one write only bit. Single bit instructions (SET, RES, INC and DEC) should not be used. SB. WRITE ONLY. If this bit is set the EEPROM is disabled (any access will be meaningless) and the power consumption of the EEPROM is reduced to the leakage values. D5, D4. Reserved for testing purposes, they must be set to zero. PS. WRITE ONLY. Once in Parallel Mode, as soon as the user software sets the PS bit the par- allel writing of the 8 adjacent registers will start. PS is internally reset at the end of the programming procedure. Note that less than 8 bytes can be writ- ten; after parallel programming the remaining un- defined bytes will have no particular content. PE. WRITE ONLY. This bit must be set by the user program in order to perform parallel programming (more bytes per time). If PE is set and the “parallel start bit” (PS) is low, up to 8 adjacent bytes can be written at the maximum speed, the content being stored in volatile registers. These 8 adjacent bytes can be considered as row, whose A7, A6, A5, A4, A3 are fixed while A2, A1 and A0 are the changing bytes. PE is automatically reset at the end of any parallel programming procedure. PE can be reset by the user software before starting the program- ming procedure, leaving unchanged the EEPROM registers. BS. READ ONLY. This bit will be automatically set by the CORE when the user program modifies an EEPROM register. The user program has to test it before any read or write EEPROM operation; any attempt to access the EEPROM while “busy bit” is set will be aborted and the writing procedure in progress completed. EN. WRITE ONLY. This bit MUST be set to one in order to write any EEPROM register. If the user program will attempt to write the EEPROM when EN= “0” the involved registers will be unaffected and the “busy bit” will not be set. After RESET the content of EECR register will be 00h. Notes: When the EEPROM is busy (BS=”1”) the EECR can not be accessed in write mode, it is only possible to read BS status. This implies that as long as the EEPROM is busy it is not possible to change the status of the EEPROM control register. EECR bits 4 and 5 are reserved for test purposes, and must never be set to “1”. 70 - SB - - PSPE BSEN |
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