ST93C46A,46C,46T

ST93C47C,47T

1K (64 x 16 or 128 x 8) SERIAL MICROWIRE EEPROM

NOT FOR NEW DESIGN

June 1997

1/13

This is information on a product still in production bu t not recommended for new de signs.

AI00871C

D

VCC

ST93C46

ST93C47

VSS

C

Q

S

ORG

Figure 1. Logic Diagram

1 MILLION ERASE/WRITE CYCLES, with

40 YEARS DATA RETENTION

DUAL ORGANIZATION: 64 x 16 or 128 x 8

BYTE/WORD and ENTIRE MEMORY

PROGRAMMING INSTRUCTIONS

SELF-TIMED PROGRAMMING CYCLE with

AUTO-ERASE

READY/BUSY SIGNAL DURING

PROGRAMMING

SINGLE SUPPLY VOLTAGE:

– 4.5V to 5.5V for ST93C46 version

– 3V to 5.5V for ST93C47 version

SEQUENTIAL READ OPERATION

5ms TYPICAL PROGRAMMING TIME

ENHANCED ESD/LATCH UP

PERFORMANCE for ”C” VERSION

ST93C46A, ST93C46C, ST93C46T,

ST93C47C, ST93C47T are replaced by the

M93C46

DESCRIPTION

This specification covers a range of 1K bit serial

EEPROM products, the ST93C46A,46C,46T

specified at 5V

±10% and the ST93C47C,47T

specified at 3V to 5.5V.

In the text, products are referred to as ST93C46.

The ST93C46 is a 1K bit Electrically Erasable

Programmable Memory (EEPROM) fabricated with

SGS-THOMSON’s High EnduranceSingle Polysili-

con CMOS technology. The memory is accessed

through a serial input (D) and output (Q).

S

Chip Select Input

D

Serial Data Input

Q

Serial Data Output

C

Serial Clock

ORG

Organisation Select

Supply Voltage

Ground

Table 1. Signal Names

8

1

SO8 (M)

150mil Width

8

1

PSDIP8 (B)

0.4mm Frame