ST93CS66

ST93CS67

4K (256 x 16) SERIAL MICROWIRE EEPROM

NOT FOR NEW DESIGN

June 1997

1/16

This is information on a product still in production bu t not recommended for new de signs.

AI00906B

D

VCC

ST93CS66

ST93CS67

VSS

CQ

PRE

W

S

Figure 1. Logic Diagram

1 MILLION ERASE/WRITE CYCLES, with

40 YEARS DATA RETENTION

SELF-TIMED PROGRAMMING CYCLE with

AUTO-ERASE

READY/BUSY SIGNAL DURING

PROGRAMMING

SINGLE SUPPLY VOLTAGE

– 3V to 5.5V for the ST93CS66

– 2.5V to 5.5V for the ST93CS67

USER DEFINED WRITE PROTECTED AREA

PAGE WRITE MODE (4 WORDS)

SEQUENTIAL READ OPERATION

5ms TYPICAL PROGRAMMING TIME

ST93CS66 and ST93CS67 are replaced by

the M93S66

DESCRIPTION

The ST93CS66 and ST93CS67 are 4K bit Electri-

cally Erasable Programmable Memory (EEPROM)

fabricated with SGS-THOMSON’s High Endurance

Single Polysilicon CMOS technology. The memory

is accessed through a serial input D and output Q.

The 4K bit memory is organized as 256 x 16 bit

words.The memory is accessed by a set of instruc-

tions which include Read, Write, Page Write, Write

All and instructions used to set the memory protec-

tion. A Read instruction loads the address of the

first word to be read into an internal address

pointer.

S

Chip Select Input

D

Serial Data Input

Q

Serial Data Output

C

Serial Clock

PRE

Protect Enable

W

Write Enable

Supply Voltage

Ground

Table 1. Signal Names

1

14

SO14 (ML)

150mil Width

8

1

PSDIP8 (B)

0.25mm Frame