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MM5451YV 数据表(PDF) 1 Page - Micrel Semiconductor |
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MM5451YV 数据表(HTML) 1 Page - Micrel Semiconductor |
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1 / 6 page ![]() Absolute Maximum Ratings Symbol Parameter Value Units VDSS Drain to Source Voltage 60 V ID Continuous Drain Current(@TA = 25°C) 200 mA IDM Drain Current Pulsed (Note 1) 500 mA VGS Gate to Source Voltage ±20 V PD Total Power Dissipation Single Operation (TA=25°C) 0.4 W Total Power Dissipation Single Operation (TA=70°C) 3.2 mW TSTG, TJ Operating Junction Temperature & Storage Temperature - 55 ~ 150 °C TL Maximum Lead Temperature for soldering purpose, 1/8 from Case for 10 seconds. 300 °C Thermal Characteristics Symbol Parameter Value Units Min. Typ. Max. RθJA Thermal Resistance, Junction-to-Ambient - - 312.5 °C/W 2N7000 January, 2003. Rev. 0. 1/6 Features ■ RDS(on) (Max 5 Ω )@VGS=10V RDS(on) (Max 5.3Ω )@VGS=4.5V ■ Gate Charge (Typical 0.5nC) ■ Maximum Junction Temperature Range (150°C) General Description This Power MOSFET is produced using planar DMOS technology. And this Power MOSFET is well suited for Battery switch, Load switch, Motor controller and other small signal switches. SemiWell Semiconductor Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. Logic N-Channel MOSFET Symbol TO-92 1 3 2 ● ● ● ▲ ◀ ● ● ● ▲ ◀ 3. Drain 1. Source 2. Gate PRELIMINARY |
类似零件编号 - MM5451YV |
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类似说明 - MM5451YV |
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