0.2

0.4

0.6

0.8

1.0

1.2

1.4

10

-1

10

0

150℃

Notes :

※

1. V

2. 250µ s Pulse Test

25℃

V

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

1.0

1.5

2.0

2.5

3.0

V

V

Note : T

※

I

02468

10

10

-1

10

0

150

25

-55

Notes :

※

1. V

2. 250µ s Pulse Test

V

10

0

10

1

10

0

V

GS

Top :

10.0 V

8.0 V

6.0 V

5.0 V

4.5 V

4.0 V

3.5 V

Bottom :

3.0 V

Notes :

※

1. 250µ s Pulse Test

2. T

V

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0

2

4

6

8

10

12

V

V

Note : I

※

Q

0

5

10

15

20

25

30

0

10

20

30

40

50

C

rss

C

oss

C

iss

Notes :

※

1. V

2. f=1MHz

C

C

C

V

3/6

Fig 3. On Resistance Variation vs.

Drain Current and Gate Voltage

Fig 4. On State Current vs.

Allowable Case Temperature

Fig 5. Capacitance Characteristics

Fig 6. Gate Charge Characteristics

2N7000

Fig 1. On-State Characteristics

Fig 2. Transfer Characteristics

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