2N7000

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

Drain-Source Breakdown Voltage

60

-

-

V

Δ

Δ

Breakdown Voltage Temperature

coefficient

-48

-

mV/°C

Drain-Source Leakage Current

--

1

1000

uA

Gate-Source Leakage, Forward

100

nA

Gate-Source Leakage, Reverse

-

-

-100

nA

On Characteristics

Gate Threshold Voltage

1.0

-

2.5

V

Static Drain-Source On-state

Resistance

-

-

1.55

1.9

5

5.3

Ω

Dynamic Characteristics

Input Capacitance

-20

25

pF

Output Capacitance

-

11

14

Reverse Transfer Capacitance

-

3

4

Dynamic Characteristics

Turn-on Delay Time

(Note 2,3)

-4

18

ns

Rise Time

-

2.5

15

Turn-off Delay Time

-

17

44

Fall Time

-

7

24

Total Gate Charge

(Note 2,3)

-

0.5

0.65

nC

Gate-Source Charge

-

0.15

-

Gate-Drain Charge(Miller Charge)

-

0.2

-

Source-Drain Diode Ratings and Characteristics

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit.

Maximum Continuous Diode Forward Current

-

-

200

mA

Diode Forward Voltage

(Note 2)

--

1.2

V

1. Repeativity rating : pulse width limited by junction temperature

2. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%

3. Essentially independent of operating temperature.

2/6

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