STB40NF10L datasheet(1/9 Pages) STMICROELECTRONICS

部件名	STB40NF10L

功能描述	N-CHANNEL 100V - 0.028Ω - 40A D2PAK LOW GATE CHARGE STripFET™ POWER MOSFET

PDF	9 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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April 2001

STB40NF10L

N-CHANNEL 100V - 0.028

Ω - 40A D2PAK

LOW GATE CHARGE STripFET™ POWER MOSFET

(1) Starting Tj = 25°C, ID = 20A, VDD = 40V

s

TYPICAL RDS(on) = 0.028Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

APPLICATION ORIENTED

CHARACTERIZATION

s

ADD SUFFIX “T4” FOR ORDERING IN TAPE &

REEL

DESCRIPTION

This Power Mosfet series realized with STMicro-

electronics unique STripFET process has specifical-

ly been designed to minimize input capacitance and

gate charge. It is therefore suitable as primary

switch in advanced high-efficiency isolated DC-DC

converters for Telecom and Computer application. It

is also intended for any application with low gate

charge drive requirements.

APPLICATIONS

s

HIGH-EFFICIENCY DC-DC CONVERTERS

s

UPS AND MOTOR CONTROL

s

AUTOMOTIVE

ABSOLUTE MAXIMUM RATINGS

(q) Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STB40NF10L

100 V

< 0.033

Ω

40 A

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

100

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

100

V

VGS

Gate- source Voltage

± 15

V

ID

Drain Current (continuos) at TC = 25°C

40

A

ID

Drain Current (continuos) at TC = 100°C

25

A

IDM (q)

Drain Current (pulsed)

160

A

PTOT

Total Dissipation at TC = 25°C

150

W

Derating Factor

1

W/°C

EAS (1)

Single Pulse Avalanche Energy

430

mJ

Tstg

Storage Temperature

–65 to 175

°C

Tj

Max. Operating Junction Temperature

175

°C

D2PAK

1

3

INTERNAL SCHEMATIC DIAGRAM

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