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STB40NF10L 数据表(PDF) 3 Page - STMicroelectronics

部件名 STB40NF10L
功能描述  N-CHANNEL 100V - 0.028Ω - 40A D2PAK LOW GATE CHARGE STripFET™ POWER MOSFET
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STB40NF10L 数据表(HTML) 3 Page - STMicroelectronics

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STB40NF10L
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD = 50 V, ID = 20 A
RG = 4.7Ω VGS = 4.5V
(see test circuit, Figure 3)
25
ns
tr
Rise Time
82
ns
Qg
Total Gate Charge
VDD = 80V, ID =40A,VGS = 5V
46
64
nC
Qgs
Gate-Source Charge
12
nC
Qgd
Gate-Drain Charge
22
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off-Delay Time
Fall Time
VDD = 50 V, ID = 20 A,
RG =4.7Ω, VGS = 4.5V
(see test circuit, Figure 3)
64
24
ns
ns
td(off)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp =80V, ID = 40 A
RG =4.7Ω, VGS = 4.5V
(see test circuit, Figure 3)
51
29
53
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
40
A
ISDM (1)
Source-drain Current (pulsed)
160
A
VSD (2)
Forward On Voltage
ISD = 40 A, VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 40 A, di/dt = 100A/µs,
VDD = 30V, Tj = 150°C
(see test circuit, Figure 5)
110
467
8
ns
nC
A
Safe Operating Area
Thermal Impedance



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