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STB40NF10L 数据表(PDF) 2 Page - STMicroelectronics

部件名 STB40NF10L
功能描述  N-CHANNEL 100V - 0.028Ω - 40A D2PAK LOW GATE CHARGE STripFET™ POWER MOSFET
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STB40NF10L 数据表(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
Rthj-case
Thermal Resistance Junction-case Max
1
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
Tl
Maximum Lead Temperature For Soldering Purpose
300
°C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
100
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
1µA
VDS = Max Rating, TC = 125 °C
10
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 15V
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
1
1.7
2.5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 20 A
0.028
0.033
Ω
VGS = 5V, ID = 20 A
0.030
0.036
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS = 15V, ID = 20 A
25
S
Ciss
Input Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
2300
pF
Coss
Output Capacitance
290
pF
Crss
Reverse Transfer
Capacitance
125
pF



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