STB70NFS03L

N - CHANNEL 30V - 0.008

PRELIMINARY DATA

DESCRIPTION:

This product associates a Power MOSFET of the

third

generation

of

ST Microelect ronics

unique

”Single Feature Size” strip-based process and a

low drop Schottky diode. The t ransistor shows t he

best

t rade-of f

between

on-resist ance

and gate

charge. Used as low side in buck regulat ors, the

product is the best solution in terms of conduction

losses and space saving.

®

INTERNAL SCHEMATIC DIAGRAM

April 2000

MOSFET ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Valu e

Uni t

30

V

Ω)30

V

Gat e-source Voltage

± 22

V

A

A

•)

Drain Current (pulsed)

280

A

100

W

Derating Factor

0.67

W/

Storage Temperature

-65 to 175

Max. Operating Junct ion Temperat ure

175

(

•) Pulse width limited by safe operating area

MAIN PRODUCT CHARACTERISTICS

MOSFET

30V

<0.01

Ω

70A

SCHOTTKY

3A

30V

0.51V

1

3

D

TO-263

(suffix ”T4”)

SCHOTTKY ABSOLUTE MAXIMUM RATINGS

Symb ol

Parameter

Valu e

Un it

Repetitive Peak Reverse Voltage

30

V

RMS F orward Current

20

A

Average F orward Current

δ =0.5

3A

Surge Non Repetit ive F orward Current

tp= 10 ms

Sinusoidal

75

A

dv/dt

Critical Rate Of Rise O f Reverse Voltage

10000

V/

µs

1/6