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STB70NFS03L 数据表(PDF) 2 Page - STMicroelectronics

部件名 STB70NFS03L
功能描述  N - CHANNEL 30V - 0.008ohm - 70A D2PAK STripFET MOSFET PLUS SCHOTTKY RECTIFIER
PDF  6 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STB70NFS03L 数据表(HTML) 2 Page - STMicroelectronics

  STB70NFS03L Datasheet HTML 1Page - STMicroelectronics STB70NFS03L Datasheet HTML 2Page - STMicroelectronics STB70NFS03L Datasheet HTML 3Page - STMicroelectronics STB70NFS03L Datasheet HTML 4Page - STMicroelectronics STB70NFS03L Datasheet HTML 5Page - STMicroelectronics STB70NFS03L Datasheet HTML 6Page - STMicroelectronics  
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THERMAL DATA
Rthj-case
Rthj-amb
T l
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Maximum Lead Temperature F or Soldering Purpose
1.5
62.5
175
oC/W
oC/W
oC
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID =250
µAVGS =0
30
V
IDSS
Zero
Gat e
Volt age
Drain Current (VGS =0)
VDS =Max Rating
VDS =Max Rating
Tc =125
oC
1
10
µA
µA
IGSS
Gat e-body
Leakage
Current (VDS =0)
VGS =
± 20 V
± 100
nA
ON (
∗)
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
VGS(th)
Gat e Threshold Voltage VDS =VGS
ID = 250
µA1
V
RDS(on)
Static Drain-source On
Resistance
VGS =10 V
ID =35 A
VGS =5 V
ID =18 A
0.008
0.015
0.01
0.018
Ω
Ω
ID(o n)
On State Drain Current
VDS >ID(o n) xRDS(on )max
VGS =10 V
70
A
DYNAMIC
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
gfs (
∗)Forward
Transconductance
VDS >ID(on) xRDS(on)max
ID =35 A
40
S
Ciss
Cos s
Crss
Input Capacitance
Out put Capacitance
Reverse
T ransf er
Capacitance
VDS = 25V
f = 1MHz
VGS = 0
1470
490
110
pF
pF
pF
STB70NFS03L
2/6



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