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STB70NFS03L 数据表(PDF) 3 Page - STMicroelectronics

部件名 STB70NFS03L
功能描述  N - CHANNEL 30V - 0.008ohm - 70A D2PAK STripFET MOSFET PLUS SCHOTTKY RECTIFIER
PDF  6 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STB70NFS03L 数据表(HTML) 3 Page - STMicroelectronics

  STB70NFS03L Datasheet HTML 1Page - STMicroelectronics STB70NFS03L Datasheet HTML 2Page - STMicroelectronics STB70NFS03L Datasheet HTML 3Page - STMicroelectronics STB70NFS03L Datasheet HTML 4Page - STMicroelectronics STB70NFS03L Datasheet HTML 5Page - STMicroelectronics STB70NFS03L Datasheet HTML 6Page - STMicroelectronics  
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay T ime
Rise Time
VDD =15 V
ID =35 A
RG =4.7
Ω
VGS =10 V
(Resistive Load, see fig. 3)
20
350
ns
ns
Qg
Q gs
Qgd
Tot al G ate Charge
Gat e-Source Charge
Gat e-Drain Charge
VDD =24 V
ID =46 A
VGS =10 V
35
5
10
45
nC
nC
nC
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
td(off)
tf
Off -volt age Rise T ime
Fall T ime
VDD =24 V
ID =35 A
RG =4.7
Ω
VGS =10 V
(Resistive Load, see fig. 3)
35
65
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
ISD
ISDM (
•)
Source-drain Current
Source-drain
Current
(pulsed)
70
280
A
A
VSD (
∗)Forward On Voltage
ISD =70 A
VGS =0
1. 5
V
trr
Qrr
IRRM
Reverse
Recovery
Time
Reverse
Recovery
Charge
Reverse
Recovery
Current
ISD =70 A
di/dt = 100 A/
µs
VDD = 15V
Tj = 150
oC
(see t est circuit, f igure 5)
70
105
2.4
ns
nC
Α
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
SCHOTTCKY STATIC ELETTRICAL CHARACTERISTICS
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
IR(
∗)
Reversed
Leakage
Current
TJ=25
oCVR=30V
TJ=125
oCV R=30V
0.03
0. 2
100
mA
mA
VF(
∗)
Forward Voltage drop
TJ=25
oCIF=3A
TJ=125
oCIF=3A
0.38
0.51
0.46
V
V
STB70NFS03L
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