L6390D datasheet(10/22 Pages) STMICROELECTRONICS

10 / 22 page

Electrical characteristics

L6390

10/22

5.2

DC operation

Table 8.

DC operation electrical characteristics (VCC = 15 V; TJ = + 25 °C)

Symbol

Parameter

Test condition

Min

Typ

Max

Unit

Low supply voltage section

Vcc_hys

Vcc UV hysteresis

1200

1500

1800

Vcc_thON

Vcc UV turn ON threshold

11.5

12.5

Vcc_thOFF

Vcc UV turn OFF threshold

10.5

Iqccu

Undervoltage quiescent

supply current

Vcc = 10 V

SD = 5 V; LIN = 5 V;

HIN = GND;

RDT = 0 Ω;

CP+=OP+=GND; OP-=5 V

120

150

µA

Iqcc

Quiescent current

Vcc = 15 V

SD = 5 V; LIN = 5 V;

HIN = GND;

RDT = 0 Ω;

CP+=OP+=GND; OP-=5 V

720

1000

µA

Vref

Internal reference voltage

500

540

580

Bootstrapped supply voltage section (1)

VBO_hys

VBO UV hysteresis

1200

1500

1800

VBO_thON

VBO UV turn ON threshold

10.6

11.5

12.4

VBO_thOFF

VBO UV turn OFF threshold

9.1

10.9

IQBOU

Undervoltage VBO quiescent

current

VBO = 9 V

SD = 5 V; LIN and

HIN = 5 V;

RDT = 0 Ω;

CP+=OP+=GND; OP-=5 V

110

µA

IQBO

VBO quiescent current

VBO = 15 V

SD = 5 V; LIN and

HIN = 5 V;

RDT = 0 Ω;

CP+=OP+=GND; OP-=5 V

150

210

µA

ILK

High voltage leakage current Vhvg = Vout = Vboot = 600 V

µA

RDS(on)

Bootstrap driver on

resistance (2)

LVG ON

120

Ω

Driving buffers section

Iso

11,

High/low side source short

circuit current

VIN = Vih (tp<10 µs)

200

290

Isi

High/low side sink short

circuit current

VIN = Vil (tp<10 µs)

250

430

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