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L6390D 数据表(PDF) 12 Page - STMicroelectronics |
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L6390D 数据表(HTML) 12 Page - STMicroelectronics |
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12 / 22 page ![]() Electrical characteristics L6390 12/22 Table 9. OPAMP characteristics (VCC = 15 V, TJ = +25 °C) Symbol Pin Parameter Test condition Min Typ Max Unit Iib 6, 9 Input bias current (1) 100 200 nA Vicm Input common mode voltage range 0V VOL 7 Low level output voltage Vid = ± 1 V, RL = 10 kΩ to VCC 75 mV VOH High level output voltage Vid = ± 1 V, RL = 10 kΩ to GND 14.7 V Io Output short circuit current Source, Vid = ± 1; Vo = 0 V 16 30 mA Sink, Vid = ± 1; Vo = VCC 50 80 mA SR Slew rate Vi = 1 ÷ 4 V; R L = 2 kΩ; CL = 100 pF; unity gain 2.5 3.8 V/ µs GBWP Gain bandwidth product Vo = 7.5 V; RL = 2 kΩ 12 MHz Avd Large signal voltage gain 75 85 dB SVR Supply voltage rejection ratio 60 70 dB CMRR Common mode rejection ratio 70 dB 1. The direction of input current is out of the IC. Table 10. Sense comparator characteristics (VCC = 15 V, TJ = +25 °C) Symbol Pin Parameter Test conditions Min Typ Max Unit Iio 10 Input bias current VCP+ = 1 V 1 µA Vol 2 Open drain low level output voltage Iod = - 3 mA 0.5 V td_comp Comparator delay SD/OD pulled to 5 V through 100 k Ω resistor 90 130 ns SR 2 Slew rate CL = 180 pF; Rpu = 5 kΩ 60 V/ µsec |
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