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L6390D 数据表(PDF) 18 Page - STMicroelectronics |
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L6390D 数据表(HTML) 18 Page - STMicroelectronics |
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18 / 22 page ![]() Bootstrap driver L6390 18/22 Equation 3 where Qgate is the gate charge of the external power MOS, Rdson is the on resistance of the bootstrap DMOS and Tcharge is the charging time of the bootstrap capacitor. For example: using a power MOS with a total gate charge of 30nC the drop on the bootstrap DMOS is about 1V, if the Tcharge is 5µs. In fact: Equation 4 Vdrop has to be taken into account when the voltage drop on CBOOT is calculated: if this drop is too high, or the circuit topology doesn’t allow a sufficient charging time, an external diode can be used. Figure 7. Bootstrap driver V drop I ch e arg Rdson V drop → Q gate T ch e arg ------------------R dson == V drop 30nC 5 µs --------------- 120 Ω 0.7V ∼ ⋅ = TO LOAD D99IN1067 H.V. HVG ab LVG HVG LVG CBOOT TO LOAD H.V. CBOOT DBOOT BOOT V CC VCC OUT OUT BOOT |
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