STM2DPFS30L datasheet(1/6 Pages) STMICROELECTRONICS

部件名	STM2DPFS30L

功能描述	P - CHANNEL 30V - 0.145ohm - 2A MiniS0-8 STripFET MOSFET PLUS SCHOTTKY RECTIFIER

PDF	6 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STM2DPFS30L

P - CHANNEL 30V - 0.145

Ω - 2A MiniS0-8

STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER

PRELIMINARY DATA

DESCRIPTION:

This product associates

the latest low voltage

St ripFET™ in p-channel

version to a low drop

Schot tk y diode. Such configuration is extremely

versatile in implement ing a large variety of DC-DC

convert ers for printers, portable equipment, and

cellular phones.

New MiniSO-8 package feat ures:

s

Half footprint area versus standard SO-8, for

application where minimum circuit board

space is necessary.

s

Extremely low profile, ideal for low thickness

equipment.

®

INTERNAL SCHEMATIC DIAGRAM

July 1999

MOSFET ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Valu e

Uni t

VDS

Drain-source Voltage (VGS =0)

30

V

VDGR

Drain- gat e Voltage (RGS =20 k

Ω)30

V

VGS

Gat e-source Voltage

± 20

V

ID

Drain Current (continuous) at Tc =25

oC2

A

ID

Drain Current (continuous) at Tc = 100

oC1.3

A

IDM(

•)

Drain Current (pulsed)

8

A

Ptot

Tot al Dissipation at Tc =25

oC1.25

W

MAIN PRODUCT CHARACTERISTICS

MOSFET

VDSS

RDS(on )

ID

30V

<0.165

Ω

2A

SCHOTTKY

IF(AV)

VRRM

VF(MAX)

1A

40V

0.55V

MiniSO-8

SCHOTTKY ABSOLUTE MAXIMUM RATINGS

Symb ol

Parameter

Valu e

Un it

VRRM

Repetitive Peak Reverse Voltage

40

V

IF(RMS)

RMS Forward Current

2

A

IF (AV)

Average F orward Current

Ta=60

o C

δ =0.5

1. 2

A

IFSM

Surge Non Repetit ive Forward Current

tp= 10 ms

Sinusoidal

5. 5

A

dv/dt

Critical Rat e Of Rise Of Reverse Voltage

10000

V/

µs

(

•) Pulse width limited by safe operating area

Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed

1/6

类似零件编号 - STM2DPFS30L

制造商	部件名	数据表	功能描述
SamHop Microelectronics...	STM201N	186Kb / 7P	Super high dense cell design for low RDS(ON).
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