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STM2DPFS30L 数据表(PDF) 2 Page - STMicroelectronics

部件名 STM2DPFS30L
功能描述  P - CHANNEL 30V - 0.145ohm - 2A MiniS0-8 STripFET MOSFET PLUS SCHOTTKY RECTIFIER
PDF  6 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM2DPFS30L 数据表(HTML) 2 Page - STMicroelectronics

  STM2DPFS30L Datasheet HTML 1Page - STMicroelectronics STM2DPFS30L Datasheet HTML 2Page - STMicroelectronics STM2DPFS30L Datasheet HTML 3Page - STMicroelectronics STM2DPFS30L Datasheet HTML 4Page - STMicroelectronics STM2DPFS30L Datasheet HTML 5Page - STMicroelectronics STM2DPFS30L Datasheet HTML 6Page - STMicroelectronics  
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THERMAL DATA
Rthj-amb
Tstg
T j
(*) Thermal Resistance Junction-ambient MOSFET
Storage Temperature Range
Maximum
Junction Temperat ure
100
-65 to 150
150
oC/W
o C
o C
(*) Mounted on a 1 in
2
pad of 2oz Cu in FR-4 board
MOSFET ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID =250
µAVGS =0
30
V
IDSS
Zero
Gat e
Volt age
Drain Current (VGS =0)
VDS =Max Rating
VDS =Max Rating
Tc = 125
oC
1
10
µA
µA
IGSS
Gat e-body
Leakage
Current (VDS =0)
VGS =
± 20 V
± 100
nA
ON (
∗)
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
VGS(th)
Gat e Threshold Voltage VDS =VGS
ID = 250
µA1
1.7
2. 5
V
RDS(on)
Static Drain-source On
Resistance
VGS =10V
ID =1 A
VGS =4.5V
ID =1 A
0.145
0.18
0.165
0. 2
Ω
ID(o n)
On State Drain Current
VDS >ID(o n) xRDS(on )max
VGS =10 V
2A
DYNAMIC
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
gfs (
∗)Forward
Transconductance
VDS >ID(o n) xRDS(on )max
ID =1 A
2
S
Ciss
Coss
Crss
Input Capacitance
Out put Capacitance
Reverse
T ransf er
Capacitance
VDS = 25V
f = 1MHz
VGS = 0
510
170
55
660
220
72
pF
pF
pF
STM2DPFS30L
2/6



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