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STM2DPFS30L 数据表(PDF) 3 Page - STMicroelectronics

部件名 STM2DPFS30L
功能描述  P - CHANNEL 30V - 0.145ohm - 2A MiniS0-8 STripFET MOSFET PLUS SCHOTTKY RECTIFIER
PDF  6 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM2DPFS30L 数据表(HTML) 3 Page - STMicroelectronics

  STM2DPFS30L Datasheet HTML 1Page - STMicroelectronics STM2DPFS30L Datasheet HTML 2Page - STMicroelectronics STM2DPFS30L Datasheet HTML 3Page - STMicroelectronics STM2DPFS30L Datasheet HTML 4Page - STMicroelectronics STM2DPFS30L Datasheet HTML 5Page - STMicroelectronics STM2DPFS30L Datasheet HTML 6Page - STMicroelectronics  
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay T ime
Rise Time
VDD =15 V
ID =1.5 A
RG =4.7
Ω
VGS =4.5 V
(Resistive Load, see fig. 1)
14.5
37
19
48
ns
ns
Qg
Q gs
Qgd
Tot al G ate Charge
Gat e-Source Charge
Gat e-Drain Charge
VDD =24 V
ID =3 A
VGS =5 V
5.5
1.7
1.8
nC
nC
nC
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay T ime
Fall T ime
VDD =15 V
ID =1.5 A
RG =4.7
Ω
VGS =4.5 V
(Resistive Load, see fig. 1)
88
23
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
ISD
ISDM (
•)
Source-drain Current
Source-drain
Current
(pulsed)
2
8
A
A
VSD (
∗)Forward On Voltage
ISD =2 A
VGS =0
1. 2
V
trr
Qrr
IRRM
Reverse
Recovery
Time
Reverse
Recovery
Charge
Reverse
Recovery
Current
ISD =2 A
di/dt =100 A/
µs
VDD = 15V
Tj = 150
oC
tbd
ns
nC
Α
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
SCHOTTKY STATIC ELETTRICAL CHARACTERISTICS
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
IR(
∗)
Reversed
Leakage
Current
TJ=25
oCVR=40V
TJ=100
oCV R=40V
1.5
40
5
µA
mA
VF(
∗)
Forward Voltage drop
TJ=25
oCI
F=1 A
TJ=100
oCI
F=1A
TJ=25
oCI
F=2 A
TJ=100
oCIF=2A
0.45
0.55
0.51
0. 7
0. 7
V
V
V
V
STM2DPFS30L
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