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USBLC6-4SC6 数据表(PDF) 4 Page - STMicroelectronics

部件名 USBLC6-4SC6
功能描述  Very low capacitance ESD protection
PDF  13 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

USBLC6-4SC6 数据表(HTML) 4 Page - STMicroelectronics

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Technical information
USBLC6-4
4/13
2
Technical information
2.1
Surge protection
The USBLC6-4SC6 is particularly optimized to provide surge protection based on the rail to
rail topology.
The clamping voltage VCL can be calculated as follows:
VCL+ = VTRANSIL + VF for positive surges
VCL- = - VF for negative surges
with: VF = VT + Rd.Ip
(VF forward drop voltage, VT forward drop threshold voltage
Calculation example
We assume that the value of the dynamic resistance of the clamping diode is typically:
Rd = 0.5 Ω and VT = 1.1 V.
For an IEC 61000-4-2 surge level 4 (Contact Discharge: Vg = 8 kV, Rg = 330 Ω),
VBUS = +5 V, and if in a first approximation, we assume that:
Ip = Vg / Rg = 24 A.
So, we find:
VCL+ = +31.2 V
VCL- = -13.1 V
Note:
The calculations do not take into account phenomena due to parasitic inductances.
2.2
Surge protection application example
If we consider that the connections from the pin VBUS to VCC, from from I/O to data line and
from GND to PCB GND plane are implemented as racks 10 mm long and 0.5 mm large, we
can assume that the parasitic inductances LVBUS LI/0 and LGND of these tracks are about
6 nH. So, when an IEC 61000-4-2 surge occurs, due to the rise time of this spike (tr = 1 ns),
the voltage VCL has an extra value equal to LI/0·dI/dt, + LGND·dI/dt
The dI/dt is calculated as:
dI/dt = Ip/tr = 24 A/ns
The overvoltage due to the parasitic inductances is:
LI/0·dI/dt, = LGND·dI/dt = 6 x 24 = 144 V
By taking into account the effect of these parasitic inductances due to unsuitable layout, the
clamping voltage will be:
VCL+ = +31.2 + 144 + 144 = 319.2 V
VCL- = -13.1 - 144 -144 = -301.1 V
We can significantly reduce this phenomena with simple layout optimization. It is for this
reason that some recommendations have to be followed (see 2.3: How to ensure good ESD
protection).



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